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MC9S12E128MPVE 其他数据使用手册 - NXP（恩智浦）
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NXP（恩智浦）
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LQFP-112
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其他系列 25MHz 128K@x8bit 8KB
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MC9S12E128MPVE数据手册
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NXP Semiconductors Netherlands B.V., High Tech Campus 60, 5656 AG Eindhoven, The Netherlands
www.nxp.com, Trade Register Eindhoven No. 17070621
2020-Aug-07
Page 1 of 2 pages
DECLARATION OF COMPLIANCE
- RoH
S Declaration -
NXP Semiconductors Netherlands B.V. declares that its certified RoHS compliant semiconductor products (including
homogeneous sub-components –pins, casing, and internal parts) are designed to be:
• RoHS compliant meeting the requirements defined under Directive 2011/65/EU of the European Parliament
and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical
and electronic equipment (EEE) – recast and its amendments
1
:
RoHS Restricted Substance
Allowable Limit
Cadmium and its compounds
100 ppm (0.01 weight %)
Mercury and its compounds
1000 ppm (0.1 weight %)
Hexavalent chromium and its compounds
1000 ppm (0.1 weight %)
Lead and its compounds
1000 ppm (0.1 weight %)
Polybrominated biphenyls (PBB)
1000 ppm (0.1 weight %)
Polybrominated diphenyl ethers (PBDE)*
1000 ppm (0.1 weight %)
Bis(2-ethylhexyl) phthalate (DEHP)**
1000 ppm (0.1 weight %)
Butyl benzyl phthalate (BBP)**
1000 ppm (0.1 weight %)
Dibutyl phthalate (DBP)**
1000 ppm (0.1 weight %)
Diisobutyl phthalate (DIBP)**
1000 ppm (0.1 weight %)
* This includes also DecaBromoDiphenylEther (Deca-BDE).
** In accordance with amendment under Commission Delegated Directive (EU) 2015/863 of 31 March 2015.
NXP RoHS compliant semiconductor devices contain no more than 0.1% lead (Pb) by weight per homogeneous
material, unless used in an application exempted by RoHS. NXP may declare the use of the following RoHS
exemptions for RoHS compliant semiconductor devices:
RoHS
Exemption
RoHS Exemption Description***
7(a)
Lead in high melting temperature type solders (i.e. lead-based alloys containing 85 % by weight or
more lead)
7(c)-I
Electrical and electronic components containing lead in a glass or ceramic other than dielectric
ceramic in capacitors, e.g. piezoelectronic devices, or in a glass or ceramic matrix compound
15
Lead in solders to complete a viable electrical connection between semiconductor die and carrier
within integrated circuit flip chip packages
15(a)
Lead in solders to complete a viable electrical connection between the semiconductor die and
carrier within integrated circuit flip chip packages where at least one of the following criteria
applies:
— a semiconductor technology node of 90 nm or larger;
— a single die of 300 mm2 or larger in any semiconductor technology node;
— stacked die packages with die of 300 mm2 or larger, or silicon interposers of 300 mm2 or larger.
*** Applicable within the scope of categories and expiry dates as given in Annex III of Directive 2011/65/EU
Any semiconductor device that NXP has certified as RoHS compliant declaring Exemption 15 or 15(a) will contain lead
(Pb) in solders. These products are RoHS compliant when used in OEM applications covered by these RoHS
exemptions permitting lead in solders for applicable categories; expiration dates as listed in Annex III of Directive
2011/65/EU. Applicability of Exemption 15 or 15(a) is dependent on OEM application and final use.
1
Including amendment under Commission Delegated Directive (EU) 2019/172 of 16 November 2018, regarding exemption 15 for
lead in solders.
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