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MCP2003BT-E/MF
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MCP2003BT-E/MF数据手册
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2015-2016 Microchip Technology Inc. DS20005463C-page 1
MCP2003B
Features
The MCP2003B is Compliant with Local
Interconnect Network (LIN) Bus Specifications
1.3, 2.0, 2.1, 2.2, SAE J2602, and ISO17987
Supports Baud Rates up to 20 Kbaudwith
LIN-Compatible Output Driver
60V Load Dump Protected
Very High Electromagnetic Immunity (EMI) Meets
Stringent Original Equipment Manufacturers
(OEM) Requirements
Direct Capacitor Coupling Robustness without
Transient Voltage Suppressor (TVS):
- ±35V on L
BUS (SAE J2962-1)
- ±85V on LBUS (SAE J2962-1)
High Electrostatic Discharge (ESD)
Immunity without TVS:
->25kV on L
BUS (SAE J2962-1)
->15kV on VBB (IEC 61000-4-2)
- >6 kV on LBUS (IEC 61000-4-2)
Very High Immunity to RF Disturbances Meets
Stringent OEM Requirements
Wide Supply Voltage: 5.5V 30.0V Continuous
Extended (E) Temperature Range: -40°C to +125°C
High (H) Temperature Range: -40°C to +150°C
Interfaces to PIC
®
MCU EUSART and Standard
USARTs
LIN Bus Pin:
- Internal pull-up resistor and diode
- Protected against battery shorts
- Protected against loss of ground
- High current drive: >40 mA
Automatic Thermal Shutdown
Low-Power Mode:
- Receiver monitoring bus and transmitter off:
(
A)
Description
This device provides a bidirectional, half-duplex
communication, physical interface to automotive and
industrial LIN systems to meet the LIN Bus
Specification Revision 2.2, SAE J2602, and ISO
17987. The device is both short-circuit and
overtemperature protected by internal circuitry. The
device has been specifically designed to operate in the
automotive operating environment and will survive all
specified transient conditions while meeting all of the
stringent quiescent current requirements.
Package Types
MCP2003B
SOIC
MCP2003B
2x3 DFN*
* Includes Exposed Thermal Pad (EP); see Table 1-2.
WAKE
CS
T
XD
V
BB
L
BUS
1
2
3
4
8
7
6
5
V
SS
V
REN
RXD
EP
9
WAKE
CS
T
XD
V
BB
L
BUS
1
2
3
4
8
7
6
5
V
SS
V
REN
RXD
EP
9
MCP2003B
3x3 DFN*
WAKE
CS
T
XD
V
BB
L
BUS
1
2
3
4
8
7
6
5
V
SS
V
REN
RXD
LIN Transceiver

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