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MCP2561FD-E/P 产品描述及参数 - Microchip（微芯）
制造商:
Microchip（微芯）
分类:
CAN芯片
封装:
DIP-8
描述:
MICROCHIP MCP2561FD-E/P 总线, CAN, 收发器, CAN, 1, 1, 4.5 V, 5.5 V, DIP
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
型号编码规则在P5
标记信息在P5
焊接温度在P2P4
电气规格在P1
导航目录
MCP2561FD-E/P数据手册
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PNT3FD403E0-5
Rev.06.1 1 www.prisemi.com
NPN general purpose transistor
This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant.
Package: DFN1006-3L
Emitter -Base Breakdown Voltage 6V
500mA continuous collector current
NPN switch transistor
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260℃
Device meets MSL 1 requirements
Pure tin plating: 7 ~ 17 um
Parameter
Symbol
Value
Units
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40
V
Collector-Base Breakdown Voltage
V
(BR)CBO
40
V
Emitter -Base Breakdown Voltage
V
(BR)EBO
6
V
Collector Current
I
C
500
mA
Peak Collector Current
I
CM
1
A
Peak Base Current
I
BM
100
mA
Maximum Power Dissipation
(Note 1)(Note 2)
TA=25°C
P
D
250
mW
Maximum Power Dissipation
(Note 3)(Note 2)
TA=25°C
P
D
590
Storage Temperature
T
stg
-65~150
°C
Max. Operating Junction Temperature
T
j
150
°C
Feature
Electrical characteristics per line@25℃( unless otherwise specified)
Mechanical Characteristics
Top View
B
C
E
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