Datasheet 搜索 > RAM芯片 > Micron（镁光） > MT47H128M16RT-25E XIT:C 数据手册 > MT47H128M16RT-25E XIT:C 其他数据使用手册 1/133 页
器件3D模型￥ 13.185
MT47H128M16RT-25E XIT:C 其他数据使用手册 - Micron（镁光）
制造商:
Micron（镁光）
分类:
RAM芯片
封装:
FBGA-84
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
原理图在P11P12P13
封装尺寸在P18
标记信息在P1P2
封装信息在P18P19P20P21P22
功能描述在P9P10
技术参数、封装参数在P23P24P25P26P27P28P29P30P31P32P33P34
应用领域在P23
电气规格在P23P24P25P26P27P28P29P30P31P44P45P46
型号编号列表在P2
导航目录
MT47H128M16RT-25E XIT:C数据手册
Page:
of 133 Go
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DDR2 SDRAM
MT47H512M4 – 64 Meg x 4 x 8 banks
MT47H256M8 – 32 Meg x 8 x 8 banks
MT47H128M16 – 16 Meg x 16 x 8 banks
Features
•V
DD
= 1.8V ±0.1V, V
DDQ
= 1.8V ±0.1V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
•4n-bit prefetch architecture
• Duplicate output strobe (RDQS) option for x8
• DLL to align DQ and DQS transitions with CK
• 8 internal banks for concurrent operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
t
CK
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Industrial temperature (IT) option
• RoHS-compliant
• Supports JEDEC clock jitter specification
Options
1
Marking
• Configuration
– 512 Meg x 4 (64 Meg x 4 x 8 banks) 512M4
– 256 Meg x 8 (32 Meg x 8 x 8 banks) 256M8
– 128 Meg x 16 (16 Meg x 16 x 8 banks) 128M16
• FBGA package (Pb-free) – x16
– 84-ball FBGA (11.5mm x 14mm) Rev. A HG
• FBGA package (Pb-free) – x4, x8
– 60-ball FBGA (11.5mm x 14mm) Rev. A HG
• FBGA package (Pb-free) – x16
– 84-ball FBGA (9mm x 12.5mm) Rev. C RT
• FBGA package (Pb-free) – x4, x8
– 60-ball FBGA (9mm x 11.5mm) Rev. C EB
• FBGA package (Lead solder) – x16
– 84-ball FBGA (9mm x 12.5mm) Rev. C PK
• Timing – cycle time
– 1.875ns @ CL = 7 (DDR2-1066) -187E
– 2.5ns @ CL = 5 (DDR2-800) -25E
– 2.5ns @ CL = 6 (DDR2-800) -25
– 3.0ns @ CL = 5 (DDR2-667) -3
• Self refresh
– Standard None
• Operating temperature
– Commercial (0°C ≤ T
C
≤ +85°C) None
– Industrial (–40°C ≤ T
C
≤ +95°C;
–40°C ≤ T
A
≤ +85°C)
IT
• Revision :A/:C
Note:
1. Not all options listed can be combined to
define an offered product. Use the Part
Catalog Search on www.micron.com for
product offerings and availability.
2Gb: x4, x8, x16 DDR2 SDRAM
Features
PDF: 09005aef824f87b6
2Gb_DDR2.pdf – Rev. H 10/11 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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