Datasheet 搜索 > Flash芯片 > Micron（镁光） > N25Q256A11E1240E 数据手册 > N25Q256A11E1240E 其他数据使用手册 1/92 页
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N25Q256A11E1240E 其他数据使用手册 - Micron（镁光）
制造商:
Micron（镁光）
分类:
Flash芯片
封装:
TBGA-24
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
典型应用电路图在P7
原理图在P12
封装尺寸在P86P87P88P90
型号编码规则在P7P8P9P86P87P88P89P90
标记信息在P89
封装信息在P89
技术参数、封装参数在P76P77P78P79P80
应用领域在P71
导航目录
N25Q256A11E1240E数据手册
Page:
of 92 Go
若手册格式错乱，请下载阅览PDF原文件
Micron Serial NOR Flash Memory
1.8V, Multiple I/O, 4KB Sector Erase
N25Q256A
Features
• SPI-compatible serial bus interface
• Double transfer rate (DTR) mode
• 1.7–2.0V single supply voltage
• 108 MHz (MAX) clock frequency supported for all
protocols in single transfer rate (STR) mode
• 54 MHz (MAX) clock frequency supported for all
protocols in DTR mode
• Dual/quad I/O instruction provides increased
throughput up to 54 MB/s
• Supported protocols
– Extended SPI, dual I/O, and quad I/O
– DTR mode supported on all
• Execute-in-place (XIP) mode for all three protocols
– Configurable via volatile or nonvolatile registers
– Enables memory to work in XIP mode directly af-
ter power-on
• PROGRAM/ERASE SUSPEND operations
• Continuous read of entire memory via a single com-
mand
– Fast read
– Quad or dual output fast read
– Quad or dual I/O fast read
• Flexible to fit application
– Configurable number of dummy cycles
– Output buffer configurable
• Software reset
– Additional RESET# pin for selected part numbers
• 3-byte and 4-byte addressability mode supported
• 64-byte, user-lockable, one-time programmable
(OTP) dedicated area
• Erase capability
– Subsector erase 4KB uniform granularity blocks
– Sector erase 64KB uniform granularity blocks
– Full-chip erase
• Write protection
– Software write protection applicable to every
64KB sector via volatile lock bit
– Hardware write protection: protected area size
defined by five nonvolatile bits (BP0, BP1, BP2,
BP3, and TB)
– Additional smart protections, available upon re-
quest
• Electronic signature
– JEDEC-standard 2-byte signature (BB19h)
– Unique ID of 17 read-only bytes including: addi-
tional extended device ID (EDID) to identify de-
vice factory options; customized factory data
• Minimum 100,000 ERASE cycles per sector
• More than 20 years data retention
• Packages JEDEC standard, all RoHS compliant
– V-PDFN-8/8mm x 6mm (also known as SON,
DFPN, MLP, MLF)
– SOP2-16/300 mil (also known as SO16W, SO16-
Wide, SOIC-16)
– T-PBGA-24b05/6mm x 8mm (also known as
TBGA24)
1.8V, 256Mb: Multiple I/O Serial Flash Memory
Features
PDF: 09005aef846a804a
n25q_256mb_1_8V_65nm.pdf - Rev. M 03/14 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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