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器件3D模型￥ 34.597
N25Q256A13EF8A0F 其他数据使用手册 - Micron（镁光）
制造商:
Micron（镁光）
分类:
Flash芯片
封装:
DFN
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
典型应用电路图在P7
原理图在P12
封装尺寸在P84P85P86P88
型号编码规则在P7P8P9P84P85P86P87P88
封装信息在P87
技术参数、封装参数在P74P75P76P77P78
应用领域在P69
导航目录
N25Q256A13EF8A0F数据手册
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of 90 Go
若手册格式错乱，请下载阅览PDF原文件
Micron Serial NOR Flash Memory
3V, Multiple I/O, 4KB Sector Erase
N25Q256A13E1240x, N25Q256A13EF840x, N25Q256A13ESF40x
N25Q256A83ESF40x, N25Q256A83E1240x, N25Q256A13EF8A0x,
N25Q256A13ESFA0x, N25Q256A13ESFH0x, N25Q256A13E12A0x
Features
• SPI-compatible serial bus interface
• Double transfer rate (DTR) mode
• 2.7–3.6V single supply voltage
• 108 MHz (MAX) clock frequency supported for all
protocols in single transfer rate (STR) mode
• 54 MHz (MAX) clock frequency supported for all
protocols in DTR mode
• Dual/quad I/O instruction provides increased
throughput up to 54 MB/s
• Supported protocols
– Extended SPI, dual I/O, and quad I/O
– DTR mode supported on all
• Execute-in-place (XIP) mode for all three protocols
– Configurable via volatile or nonvolatile registers
– Enables memory to work in XIP mode directly af-
ter power-on
• PROGRAM/ERASE SUSPEND operations
• Continuous read of entire memory via a single com-
mand
– Fast read
– Quad or dual output fast read
– Quad or dual I/O fast read
• Flexible to fit application
– Configurable number of dummy cycles
– Output buffer configurable
• Software reset
• 3-byte and 4-byte addressability mode supported
• 64-byte, user-lockable, one-time programmable
(OTP) dedicated area
• An additional reset pin is available on the following
devices
– N25Q256A83ESF40x, N25Q256A83E1240x
• Erase capability
– Subsector erase 4KB uniform granularity blocks
– Sector erase 64KB uniform granularity blocks
– Full-chip erase
• Write protection
– Software write protection applicable to every
64KB sector via volatile lock bit
– Hardware write protection: protected area size
defined by five nonvolatile bits (BP0, BP1, BP2,
BP3, and TB)
– Additional smart protections, available upon re-
quest
• Electronic signature
– JEDEC-standard 2-byte signature (BA19h)
– Unique ID of 17 read-only bytes including: addi-
tional extended device ID (EDID) to identify de-
vice factory options; customized factory data
• Minimum 100,000 ERASE cycles per sector
• More than 20 years data retention
• Packages JEDEC standard, all RoHS compliant
– V-PDFN-8/8mm x 6mm (also known as SON,
DFPN, MLP, MLF)
– SOP2-16/300mils (also known as SO16W, SO16-
Wide, SOIC-16)
– T-PBGA-24b05/6mm x 8mm (also known as
TBGA24)
3V, 256Mb: Multiple I/O Serial Flash Memory
Features
PDF: 09005aef84566603
n25q_256mb_65nm.pdf - Rev. O 12/12 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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