Web Analytics
Datasheet 搜索 > 存储芯片 > ST Microelectronics(意法半导体) > NAND01GW3B2AN6E 数据手册 > NAND01GW3B2AN6E 其他数据使用手册 1/60 页
NAND01GW3B2AN6E
器件3D模型
16.668
导航目录
  • 典型应用电路图在P9P14
  • 型号编码规则在P7P58
  • 技术参数、封装参数在P40
NAND01GW3B2AN6E数据手册
Page:
of 60 Go
若手册格式错乱,请下载阅览PDF原文件
April 2008 Rev 5 1/60
1
NAND01G-B2B
NAND02G-B2C
1-Gbit, 2-Gbit,
2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
Features
High density NAND flash memories
Up to 2 Gbits of memory array
Cost effective solutions for mass storage
applications
NAND interface
x8 or x16 bus width
Multiplexed address/ data
Pinout compatibility for all densities
Supply voltage: 1.8 V/3.0 V
Page size
x8 device: (2048 + 64 spare) bytes
x16 device: (1024 + 32 spare) words
Block size
x8 device: (128 K + 4 K spare) bytes
x16 device: (64 K + 2 K spare) words
Page read/program
Random access: 25 µs (max)
Sequential access: 30 ns (min)
Page program time: 200 µs (typ)
Copy back program mode
Cache program and cache read modes
Fast block erase: 2 ms (typ)
Status register
Electronic signature
Chip enable ‘don’t care’
Serial number option
Data protection
Hardware block locking
Hardware program/erase locked during
power transitions
Data integrity
100 000 program/erase cycles per block
(with ECC)
10 years data retention
ECOPACK
®
packages
Development tools
Error correction code models
Bad blocks management and wear leveling
algorithms
Hardware simulation models
FBGA
TSOP48 12 x 20 mm
VFBGA63 9.5 x 12 x 1 mm
VFBGA63 9 x 11 x 1 mm
Table 1. Device summary
Reference Part number
NAND01G-B2B
NAND01GR3B2B, NAND01GW3B2B
NAND01GR4B2B, NAND01GW4B2B
(1)
NAND02G-B2C
NAND02GR3B2C, NAND02GW3B2C
NAND02GR4B2C, NAND02GW4B2C
(1)
1. x16 organization only available for MCP products.
www.numonyx.com

NAND01GW3B2AN6E 数据手册

ST Microelectronics(意法半导体)
61 页 / 1.37 MByte
ST Microelectronics(意法半导体)
60 页 / 1.3 MByte

NAND01GW3B2AN6 数据手册

ST Microelectronics(意法半导体)
NAND闪存 2.7-3.6V 1G (128Mx8)
ST Microelectronics(意法半导体)
器件 Datasheet 文档搜索
器件加载中...
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册,每天更新 5,000 多个 PDF 文件