Datasheet 搜索 > 存储芯片 > Micron（镁光） > NAND256W3A2BN6F TR 数据手册 > NAND256W3A2BN6F TR 其他数据使用手册 1/60 页
器件3D模型￥ 20.045
NAND256W3A2BN6F TR 其他数据使用手册 - Micron（镁光）
制造商:
Micron（镁光）
分类:
存储芯片
封装:
TFSOP-48
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
典型应用电路图在P8P16
型号编码规则在P7P55
技术参数、封装参数在P36
导航目录
NAND256W3A2BN6F TR数据手册
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of 60 Go
若手册格式错乱，请下载阅览PDF原文件
October 2012 Rev. 17 1/60
1
NAND128-A NAND256-A
128-Mbit or 256-Mbit, 528-byte/264-word page,
3 V, SLC NAND flash memories
Features
• High density NAND flash memories
– Up to 256-Mbit memory array
– Up to 32-Mbit spare area
– Cost effective solutions for mass storage
applications
•NAND interface
–x8 or x16 bus width
– Multiplexed address/ data
– Pinout compatibility for all densities
• Supply voltage
–V
DD
= 2.7 to3.6 V
•Page size
– x8 device: (512 + 16 spare) bytes
– x16 device: (256 + 8 spare) words
•Block size
– x8 device: (16 K + 512 spare) bytes
– x16 device: (8 K + 256 spare) words
• Page read/program
– Random access: 12 µs (3V)/15 us (1.8V)
(max)
– Sequential access: 50 ns (min)
– Page program time: 200 µs (typ)
• Copy back program mode
– Fast page copy without external buffering
• Fast block erase
– Block erase time: 2 ms (typical)
• Status register
• Electronic signature
• Chip enable ‘don’t care’
– Simple interface with microcontroller
• Security features
–OTP area
– Serial number (unique ID)
• Hardware data protection
– Program/erase locked during power
transitions
• Data integrity
– 100,000 program/erase cycles
– 10 years data retention
• RoHS compliance
– Lead-free components are compliant with
the RoHS directive
•Development tools
– Error correction code software and
hardware models
– Bad blocks management and wear leveling
algorithms
– File system OS native reference software
– Hardware simulation models
TSOP48 12 x 20mm
FBGA
VFBGA55 8 x 10 x 1.05mm
www.numonyx.com
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