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NCE4080K 其他数据使用手册 - NCE
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NCE4080K数据手册
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NCE4080K
Pb Free Product
http://www.ncepower.com
Wuxi NCE Power Semiconductor Co., Ltd Page v1.0
1
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE4080K uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
General Features
● V
DS
=40V,I
D
=80A
R
DS(ON)
<7mΩ @ V
GS
=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E
AS
● Excellent package for good heat dissipation
Application
● PWM
● Load Switching
100% UIS TESTED!
100% ΔVds TESTED!
Schematic diagram
Marking and pin assignment
TO-252-2L top view
Package Marking and Ordering Information
Device Marking Device Device Package Reel Size Tape width Quantity
NCE4080K NCE4080K TO-252-2L - - -
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
40 V
Gate-Source Voltage
V
GS
±20 V
Drain Current-Continuous
I
D
80 A
Drain Current-Continuous(T
C
=100℃) I
D
(100℃) 56 A
Pulsed Drain Current
I
DM
350 A
Maximum Power Dissipation
P
D
80 W
Derating factor
0.53 W/℃
Single pulse avalanche energy
(Note 5)
E
AS
670 mJ
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55 To 175 ℃
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