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NSS1C200MZ4 其他数据使用手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
封装:
SOT-223
描述:
100 V， 2.0 A ，低VCE （ sat）的PNP晶体管 100 V, 2.0 A, Low VCE(sat) PNP Transistor
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NSS1C200MZ4数据手册
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© Semiconductor Components Industries, LLC, 2008
April, 2008 - Rev. 0
1 Publication Order Number:
NSS1C200MZ4/D
NSS1C200MZ4
100 V, 2.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor's e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC-DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
•This is a Pb-Free Device
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating Symbol Max Unit
Collector‐Emitter Voltage V
CEO
-100 Vdc
Collector‐Base Voltage V
CB
-140 Vdc
Emitter‐Base Voltage V
EB
-7.0 Vdc
Base Current - Continuous I
B
1.0 Adc
Collector Current - Continuous
Collector Current - Peak
I
C
2.0
3.0
Adc
Total Power Dissipation
Total P
D
@ T
A
= 25°C (Note 1)
Total P
D
@ T
A
= 25°C (Note 2)
P
D
2.0
0.8
W
Operating and Storage Junction
Temperature Range
T
J
, T
stg
-55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)
R
q
JA
64
155
°C/W
Maximum Lead Temperature for
Soldering Purposes, 1/8″ from
case for 5 seconds
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. mounted on 1″ sq. (645 sq. mm) Collector pad on FR-4 bd material
2. mounted on 0.012″ sq. (7.6 sq. mm) Collector pad on FR-4 bd material
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
-100 VOLTS, 2.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
Device Package Shipping
†
ORDERING INFORMATION
NSS1C200T1G SOT-223
(Pb-Free)
1000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SOT-223
CASE 318E
STYLE 1
MARKING
DIAGRAM
Top View Pinout
C
CEB
4
123
1
1C200G
AYW
A = Assembly Location
Y = Year
W = Work Week
1C200 = Specific Device Code
G = Pb-Free Package
NSS1C200T3G SOT-223
(Pb-Free)
4000/
Tape & Reel
PIN ASSIGNMENT
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