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NX5032GA-8.000M-STD-CSU-1 其他数据使用手册 - Nihon Dempa Kogyo（日本电波）
制造商:
Nihon Dempa Kogyo（日本电波）
分类:
晶振
封装:
SMD-2
描述:
晶体振荡器
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NX5032GA-8.000M-STD-CSU-1数据手册
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1/10September 2002
STD2NM60
STD2NM60-1
N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK
Zener-Protected MDmesh™Power MOSFET
(1)I
SD
<2A, di/dt<400A/µs, V
DD
<V
(BR)DSS
, T
J
<T
JMAX
■ TYPICAL R
DS
(on) = 2.8 Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
CHARGE
■ LOW GATE INPUT RESISTANCE
■ TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
DESCRIPTION
The MDmesh™
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
TYPE V
DSS
R
DS(on)
I
D
STD2NM60
STD2NM60-1
600V
600V
< 3.2 Ω
< 3.2 Ω
2 A
2 A
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0)
600 V
V
DGR
Drain-gate Voltage (R
GS
= 20 kΩ)
600 V
V
GS
Gate- source Voltage ±30 V
I
D
Drain Current (continuous) at T
C
= 25°C
2A
I
D
Drain Current (continuous) at T
C
= 100°C
1.26 A
I
DM
(●)
Drain Current (pulsed) 8 A
P
TOT
Total Dissipation at T
C
= 25°C
46 W
Derating Factor 0.37 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 1kV
dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns
T
stg
Storage Temperature –65 to 150 °C
T
j
Max. Operating Junction Temperature 150 °C
1
3
DPAK
TO-252
3
2
1
IPAK
TO-251
INTERNAL SCHEMATIC DIAGRAM
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