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OPI1264C数据手册
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Optically Coupled Isolator
OPI110, OPI1264 Series
© TT electronics plc
Issue B 11/2016 Page 1
TT Electronics | OPTEK Technology
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.electronics.com | sensors@electronics.com
General Note
TT Electronics reserves the right to make changes in product specicaon without
noce or liability. All informaon is subject to TT Electronics’ own data and is
considered accurate at me of going to print.
Descripon:
Each Optoisolator in this data sheet contains an infrared Light Eming Diode (LED) and a NPN silicon Photosensor. The
OPI110 and OPI1264 devices have 890 nm Light Eming Diode (LED) and NPN phototransistor sensor. The devices are
sealed in a precast opaque housing with a opcally transmissive path between the LED and the photosensor.
The Optoisolators in this data sheet are UL approved under E58730.
This series is designed for transmission of informaon between one power supply voltage and another where the potenals
during surge condions are not greater than the guaranteed isolaon voltage.
Custom electrical, wire and cabling and connectors are available. Contact your local representave or OPTEK for more
informaon.
Applicaons:
High voltage isolaon between input and output
Electrical isolaon in dirty environments
Industrial equipment
Medical equipment
Features:
15 kV electrical isolaon
Choice of phototransistor
Low-cost plasc housing
UL recognized File No. E58730
Ordering Information
Part
Number
LED
Peak
Wavelength
Sensor
Isolation
Voltage
(,000)
CTR
Min /
Max
I
F
(mA)
Typ / Max
V
CE
(Volts)
Max
Lead
Length /
Spacing
OPI110
890 nm
Transistor
10
12.5 / NA
10 / 40
30 0.50" / 0.55"
OPI110A
25 / NA
OPI110B
50 / 125
OPI110C
100 / NA
OPI1264
Transistor
12.5 / NA
10 / 40
OPI1264A
25 / NA
OPI1264B
50 / 125
OPI1264C
100 / NA

OPI1264C 数据手册

TT Electronics/Optek Technology
3 页 / 0.27 MByte
TT Electronics/Optek Technology
3 页 / 0.53 MByte
TT Electronics/Optek Technology
1 页 / 0.13 MByte

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