Datasheet 搜索 > MOS管 > NXP（恩智浦） > PMDXB600UNE 数据手册 > PMDXB600UNE 其他数据使用手册 1/15 页
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PMDXB600UNE 其他数据使用手册 - NXP（恩智浦）
制造商:
NXP（恩智浦）
分类:
MOS管
封装:
XFDFN-6
描述:
NXP PMDXB600UNE 双路场效应管, MOSFET, 双N沟道, 600 mA, 20 V, 0.47 ohm, 4.5 V, 700 mV
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PMDXB600UNE数据手册
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DFN1010B-6
PMDXB600UNE
20 V, dual N-channel Trench MOSFET
1 July 2015 Product data sheet
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1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•
Trench MOSFET technology
•
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
•
Exposed drain pad for excellent thermal conduction
•
ElectroStatic Discharge (ESD) protection > 1 kV HBM
•
Drain-source on-state resistance R
DSon
= 470 mΩ
3. Applications
•
Relay driver
•
High-speed line driver
•
Low-side load switch
•
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
V
DS
drain-source voltage - - 20 V
V
GS
gate-source voltage
T
j
= 25 °C
-8 - 8 V
I
D
drain current V
GS
= 4.5 V; T
amb
= 25 °C [1] - - 600 mA
Static characteristics (per transistor)
R
DSon
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 600 mA; T
j
= 25 °C - 470 620 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm
2
.
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