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PMLL4448 其他数据使用手册 - Nexperia（安世）
制造商:
Nexperia（安世）
分类:
肖特基二极管
封装:
MiniMELF
描述:
小信号开关二极管，Nexperia### 特点支持自定义高密度电路设计 提供低泄漏和高电压类型 高切换速度 低电容
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PMLL4448数据手册
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of 5 Go
若手册格式错乱，请下载阅览PDF原文件
1N4448W
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 13-May-13
1
Document Number: 85722
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diode
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature.
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
1N4448W
1N4448W-E3-08 or 1N4448W-E3-18
Single diode A3 Tape and reel
1N4448W-HE3-08 or 1N4448W-HE3-18
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
75 V
Repetitive peak reverse voltage V
RRM
100 V
Average rectified current half wave
rectification with resistive load
(1)
f 50 Hz I
F(AV)
150 mA
Surge current t < 1 s and T
j
= 25 °C I
FSM
500 mA
Power dissipation
(1)
P
tot
500 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
350 K/W
Junction temperature T
j
150 °C
Storage temperature T
stg
- 65 to + 150 °C
Operating temperature T
op
- 55 to + 150 °C
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