Web Analytics
Datasheet 搜索 > 二极管 > Nexperia(安世) > PUSB3AB4Z 数据手册 > PUSB3AB4Z 其他数据使用手册 4/14 页
PUSB3AB4Z
0.094
导航目录
  • 引脚图在P3
  • 封装尺寸在P9
  • 型号编码规则在P3
  • 标记信息在P3
  • 焊接温度在P10
  • 功能描述在P2
  • 技术参数、封装参数在P12
  • 应用领域在P2P12
PUSB3AB4Z数据手册
Page:
of 14 Go
若手册格式错乱,请下载阅览PDF原文件
PUSB3AB4 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet Rev. 2 — 4 May 2016 3 of 13
NXP Semiconductors
PUSB3AB4
ESD protection for ultra high-speed interfaces
6. Characteristics
[1] This parameter is guaranteed by design.
[2] 100 ns Transmission Line Pulse (TLP); 50 ; pulser at 80 ns.
[3] According to IEC 61000-4-5 (8/20 s current waveform).
Table 5. Characteristics
T
amb
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
BR
breakdown voltage I
I
=1mA 5.5 9 - V
I
LR
reverse leakage current per channel; V
I
=5V - <1 100 nA
C
line
line capacitance f = 1 MHz; V
I
=1.5V
[1]
- 0.17 0.2 pF
r
dyn
dynamic resistance TLP
[2]
positive transient - 0.4 -
negative transient - 0.4 -
V
sbck
snapback voltage I
I
= 1 A; TLP 100/10 ns - 3.3 - V
V
CL
clamping voltage I
PP
= 5 A; positive transient
[3]
-5-V
I
PP
= 5A;
negative transient
[3]
- 5- V

PUSB3AB4Z 数据手册

Nexperia(安世)
14 页 / 1.17 MByte

PUSB3AB4 数据手册

Nexperia(安世)
静电保护装置, 5 V, DFN2510A, 10 引脚, 3.3 V
NXP(恩智浦)
器件 Datasheet 文档搜索
器件加载中...
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册,每天更新 5,000 多个 PDF 文件