Datasheet 搜索 > ROHM Semiconductor（罗姆半导体） > RRQ045P03 数据手册 > RRQ045P03 其他数据使用手册 1/5 页
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RRQ045P03 其他数据使用手册 - ROHM Semiconductor（罗姆半导体）
制造商:
ROHM Semiconductor（罗姆半导体）
封装:
SOT-163
描述:
RRQ045P03 P沟道MOS场效应管 -30V -4.5A 53毫欧 SOT-153 marking/标记 UB 低导通电阻 高功率封装 高速开关
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3D模型
符号图
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RRQ045P03数据手册
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
4V Drive Pch MOSFET
RRQ045P03
zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance.
2) High Power Package.
3) High speed switching.
zApplication
Switching
zPackaging specifications zInner circuit
Taping
RRQ045P03
Type
TR
3000
Package
Basic ordering unit
(pieces)
Code
zAbsolute maximum ratings (Ta=25°C)
Parameter
V
V
A
A
W
°C
A
A
°C
V
DSS
V
GSS
I
S
P
D
Tch
I
D
I
SP
I
DP
Tstg
Symbol
−30
±20
−1.0
−18
1.25
150
−55 to +150
Limits Unit
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Drain−source voltage
Gate−source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
Continuous
Pulsed
Continuous
Pulsed
∗1
∗1
∗2
±4.5
±18
zThermal resistance
Parameter
°C / W
Rth(ch-a)
Symbol Limits Unit
C
hannel to ambient
∗ When mounted on a ceramic board
100
∗
Each lead has same dimensions
TSMT6
0.4
(1)
(5)
(3)
(6)
(2)
(4)
1pin mark
2.8
1.6
1.9
2.9
0.950.95
0
~
0.1
0.16
0.85
1.0MAX
0.7
0.3
~
0.6
Abbreviated symbol : UB
(1)
∗1
∗2
(2) (3)
(4)(5)(6)
∗1 ESD PROTECTION DIODE
(1)Drain
(2)Drain
(3)Gate
(4)Source
(5)Drain
(6)Drain
∗2 BODY DIODE
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