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RS1MB-13-F 其他数据使用手册 - Diodes（美台）
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Diodes（美台）
分类:
TVS二极管
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SMB
描述:
RS1MB 系列 1000 V 1 A 表面贴装 快速恢复 整流器 - DO-214AA
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RS1MB-13-F数据手册
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若手册格式错乱，请下载阅览PDF原文件
RS1A/B - RS1M/B
Document number: DS15002 Rev. 14 - 2
2 of 5
www.diodes.com
January 2015
© Diodes Incorporated
RS1A/B - RS1M/B
Maximum Ratings (@T
A
= +25°C unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol
RS1
A/AB
RS1
B/BB
RS1
D/DB
RS1
G/GB
RS1
J/JB
RS1
K/KB
RS1
M/MB
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 5)
V
RRM
V
RWM
V
R
50 100 200 400 600 800 1,000 V
RMS Reverse Voltage
V
R
(
RMS
)
35 70 140 280 420 560 700 V
Average Rectified Output Current @ T
T
= +120°C I
O
1.0 A
Non-Repetitive Peak Forward Surge Current, 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
I
FSM
30 A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance, Junction to Terminal (Note 6)
R
θ
JT
20 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-65 to +150
°C
Electrical Characteristics (@T
A
= +25°C unless otherwise specified.)
Characteristic Symbol
RS1
A/AB
RS1
B/BB
RS1
D/DB
RS1
G/GB
RS1
J/JB
RS1
K/KB
RS1
M/MB
Unit
Minimum Reverse Breakdown Voltage (Note 5) @ I
R
=0.5 µA V
(
BR
)
R
50 100 200 400 600 800 1,000 V
Maximum Forward Voltage Drop @ I
F
= 1.0A V
FM
1.3 V
Peak Reverse Current @ T
A
= +25°C
at Rated DC Blocking Voltage (Note 5) @ T
A
= +125°C
I
RM
5.0
200
µA
Maximum Reverse Recovery Time (Note 7)
t
r
r
150 250 500 ns
Typical Total Capacitance (Note 8)
C
T
15 pF
Notes: 5. Short duration pulse test used to minimize self-heating effect.
6. Valid provided that terminals are kept at ambient temperature.
7. Reverse recovery test conditions: I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See Figure 5.
8. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
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