Datasheet 搜索 > MOS管 > ROHM Semiconductor（罗姆半导体） > RSS090P03FU6TB 数据手册 > RSS090P03FU6TB 其他数据使用手册 1/5 页
器件3D模型￥ 7.205
RSS090P03FU6TB 其他数据使用手册 - ROHM Semiconductor（罗姆半导体）
制造商:
ROHM Semiconductor（罗姆半导体）
分类:
MOS管
封装:
SOP-8
Pictures:
3D模型
符号图
焊盘图
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RSS090P03FU6TB数据手册
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RSS090P03
Transistors
Rev.B 1/4
4V Drive
Pch
MOS FET
RSS090P03
zStructure zExternal dimensions (Unit : mm)
Silicon P-channel MOS FET
Each lead has same dimensions
SOP8
3.9
6.0
0.4Min.
5.0
1.27
0.2
1.75
(
1
)
(
4
)
(
8
)
(
5
)
0.4
1pin mark
zFeatures
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
zApplication
Power switching, DC / DC converter.
zPackaging specifications zEquivalent circuit
Package
Code
Taping
Basic ordering unit (pieces)
RSS090P03
TB
2500
Type
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6 )Drain
(7) Drain
(8) Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2
∗1
(8) (7) (6) (5)
(1) (2) (3) (4)
zAbsolute maximum ratings (Ta=25°C)
∗1
∗1
∗2
Parameter
V
V
DSS
Symbol
−30
V
V
GSS
±20
A
I
D
±9.0
A
I
DP
±36
A
I
S
−1.6
A
I
SP
−36
W
P
D
2.0
°C
Tch 150
°C
Tstg
−55 to +150
Limits Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of Storage temperature
Continuous
Pulsed
Continuous
Pulsed
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Source current
(Body diode)
zThermal resistance
°C / W
Rth (ch-a) 62.5
Parameter Symbol Limits Unit
Channel to ambient
∗
Mounted on a ceramic board.
∗
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