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S1AB-13-F 产品手册 - Diodes（美台）
制造商:
Diodes（美台）
分类:
TVS二极管
封装:
SMB
描述:
1.0A表面装载玻璃钝化整流 玻璃钝化模施工•低正向..
Pictures:
3D模型
符号图
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引脚图
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页面导航:
型号编码规则在P1P3
标记信息在P1P3
封装信息在P3
电气规格在P1
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S1AB-13-F数据手册
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若手册格式错乱，请下载阅览PDF原文件
S1A/B - S1M/B
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
Features
• Glass Passivated Die Construction
• Low Forward Voltage Drop and High Current Capability
• Surge Overload Rating to 30A Peak
• Ideally Suited for Automated Assembly
• Lead Free Finish/RoHS Compliant (Note 3)
Mechanical Data
• Case: SMA/SMB
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Lead Free Plating (Matte Tin Finish).
Solderable per MIL-STD-202, Method 208
• Polarity: Cathode Band or Cathode Notch
• Marking: Type Number, See Page 3
• Ordering Information: See Page 3
• SMA Weight: 0.064 grams (approximate)
• SMB Weight: 0.093 grams (approximate)
A
B
C
D
G
H
E
J
SMA SMB
Dim
Min Max Min Max
A 2.29 2.92 3.30 3.94
B 4.00 4.60 4.06 4.57
C 1.27 1.63 1.96 2.21
D 0.15 0.31 0.15 0.31
E 4.80 5.59 5.00 5.59
G 0.10 0.20 0.10 0.20
H 0.76 1.52 0.76 1.52
J 2.01 2.30 2.00 2.40
All Dimensions in mm
A, B, D, G, J, K, M Suffix Designates SMA Package
AB, BB, DB, GB, JB, KB, MB Suffix Designates SMB Package
Maximum Ratings and Electrical Characteristics @T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
S1
A/AB
S1
B/BB
S1
D/DB
S1
G/GB
S1
J/JB
S1
K/KB
S1
M/MB
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50 100 200 400 600 800 1000 V
RMS Reverse Voltage
V
R(RMS)
35 70 140 280 420 560 700 V
Average Rectified Output Current @ T
T
= 100°C I
O
1.0 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
I
FSM
30 A
Forward Voltage @ I
F
= 1.0A V
FM
1.1 V
Peak Reverse Leakage Current @ T
A
= 25°C
at Rated DC Blocking Voltage @ T
A
= 125°C
I
RM
5.0
100
μA
Maximum Reverse Recovery Time (Note 4)
t
rr
2.0
μs
Typical Total Capacitance (Note 1)
C
T
10
pF
Typical Thermal Resistance, Junction to Terminal (Note 2)
R
θJT
30
°C/W
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +150
°C
Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance junction to terminal, unit mounted on PC board with 5.0 mm
2
(0.013 mm thick) copper pads as heat sink.
3. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.
4. Measured with I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A.
DS16003 Rev. 16 - 2 1 of 3
www.diodes.com
S1A/B – S1M/B
© Diodes Incorporated
SPICE MODEL: S1A S1B S1D S1G S1J S1K S1M S1AB
S1BB S1DB S1GB S1JB S1KB S1MB
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