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SBL3040 产品描述及参数 - Vishay Semiconductor（威世）
制造商:
Vishay Semiconductor（威世）
封装:
TO-247
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SBL3040数据手册
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若手册格式错乱，请下载阅览PDF原文件
DS30022 Rev. 6 - 4
1 of 3
www.diodes.com
SBL3030CT - SBL3040CT
© Diodes Incorporated
DISCONTINUED
SBL3030CT - SBL3040CT
30A SCHOTTKY BARRIER RECTIFIER
Features
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,
Free Wheeling, and Polarity Protection Applications
Lead Free Finish, RoHS Compliant (Note 3)
Mechanical Data
Case: TO-220AB
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish – Tin. Solderable per MIL-STD-202, Method
208
Polarity: As Marked on Body
Marking: Type Number
Ordering Information: See Page 3
Weight: 2.24 grams (approximate)
TO-220AB
Dim Min Max
A 14.48 15.75
B 10.00 10.40
C 2.54 3.43
D 5.90 6.40
E 2.80 3.93
G 12.70 14.27
H 2.40 2.70
J 0.69 0.93
K 3.54 3.78
L 4.07 4.82
M 1.15 1.39
N 0.30 0.50
P 2.04 2.79
All Dimensions in mm
Maximum Ratings and Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
SBL
3030CT
SBL
3040CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30 40 V
RMS Reverse Voltage V
R(RMS)
21 28 V
Average Rectified Output Current (Note 1) @ T
C
= 100°C I
O
30 A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
I
FSM
250 A
Forward Voltage Drop @ I
F
= 15A, T
C
= 25C
V
FM
0.55 V
Peak Reverse Current @T
C
= 25C
at Rated DC Blocking Voltage @ T
C
= 100C
I
RM
1.0
75
mA
Typical Total Capacitance (Note 2) C
T
450 pF
Typical Thermal Resistance Junction to Case (Note 1)
R
JC
1.5
C/W
Operating Temperature Range T
j
-55 to +125
C
Storage Temperature Range T
STG
-55 to +150
C
Critical Rate of Rise Reverse Voltage dv/dt 10,000
V/s
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.
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