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SD103AWS-7-F 产品封装文件 - Diodes Zetex（捷特科）
制造商:
Diodes Zetex（捷特科）
分类:
肖特基二极管
封装:
SOD-323
描述:
300mA 至 1A，Diodes Inc超势垒整流器 (SBR) 二极管是下一代整流器。 与类似肖特基二极管相比，该两端子设备具有较低的正向电压 (VF)。 同时具有 PN 外延二极管的热稳定性和高可靠性特征。### 二极管和整流器，Diodes Inc
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SD103AWS-7-F数据手册
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SD103AWS - SD103CWS
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
• Low Forward Voltage Drop
• Guard Ring Construction for Transient Protection
• Negligible Reverse Recovery Time
• Low Reverse Capacitance
• Ultra-Small Surface Mount Package
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
• Qualified to AEC-Q101 Standards for High Reliability
(Only for SD103AWS-7-F)
Mechanical Data
• Case: SOD-323
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Leads: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
• Polarity: Cathode Band
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.004 grams (approximate)
Top View
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol SD103AWS SD103BWS SD103CWS Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
40 30 20 V
RMS Reverse Voltage
V
R(RMS)
28 21 14 V
Forward Continuous Current (Note 1)
I
FM
350 mA
Non-Repetitive Peak Forward Surge Current @ t ≤ 1.0s
I
FSM
1.5 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1)
P
D
200 mW
Thermal Resistance, Junction to Ambient Air (Note 1)
R
θ
JA
625
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-65 to +125
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
SD103AWS
Reverse Breakdown Voltage (Note 2) SD103BWS
SD103CWS
V
(BR)R
40
30
20
⎯ ⎯
V
I
R
= 100μA
I
R
= 100μA
I
R
= 100μA
Forward Voltage Drop
V
F
⎯ ⎯
0.37
0.60
V
I
F
= 20mA
I
F
= 200mA
SD103AWS
Peak Reverse Current (Note 2) SD103BWS
SD103CWS
I
R
⎯ ⎯
5.0
μA
V
R
= 30V
V
R
= 20V
V
R
= 10V
Total Capacitance
C
T
⎯
28
⎯
pF
V
R
= 0V, f = 1.0MHz
Reverse Recovery Time
t
rr
⎯
10
⎯
ns
I
F
= I
R
= 200mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Notes: 1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
SD103AWS - SD103CWS
Document number: DS30101 Rev. 16 - 2
1 of 3
www.diodes.com
July 2008
© Diodes Incorporated
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