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SI2301BDS-T1-E3 其他数据使用手册 - VISHAY（威世）
制造商:
VISHAY（威世）
分类:
MOS管
封装:
SOT-23-3
描述:
P沟道2.5 V （G -S ）的MOSFET P-Channel 2.5 V (G-S) MOSFET
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SI2301BDS-T1-E3数据手册
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Vishay Siliconix
Si2301BDS
Document Number: 72066
S11-2044-Rev. F, 17-Oct-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-Channel 2.5 V (G-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
•100 % R
g
Te s ted
• Compliant to RoHS Directive 2002/95/EC
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface mounted on FR4 board, t 5 s.
c. Surface mounted on FR4 board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()
I
D
(A)
b
- 20
0.100 at V
GS
= - 4.5 V
- 2.4
0.150 at V
GS
= - 2.5 V
- 2.0
Ordering Information:
Si2301BDS-T1-E3 (Lead (Pb)-free)
Si2301BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
Si2301 BDS (L1)*
* Marking Code
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
- 20
V
Gate-Source Voltage
V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
b
T
A
= 25 °C
I
D
- 2.4 - 2.2
A
T
A
= 70 °C
- 1.9 - 1.8
Pulsed Drain Current
a
I
DM
- 10
Continuous Source Current (Diode Conduction)
b
I
S
- 0.72 - 0.6
Power Dissipation
b
T
A
= 25 °C
P
D
0.9 0.7
W
T
A
= 70 °C
0.57 0.45
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b
R
thJA
120 145
°C/W
Maximum Junction-to-Ambient
c
140 175
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