Datasheet 搜索 > MOS管 > Vishay Semiconductor（威世） > SI2328DS-T1-E3 数据手册 > SI2328DS-T1-E3 产品手册 1/5 页
￥ 1.247
SI2328DS-T1-E3 产品手册 - Vishay Semiconductor（威世）
制造商:
Vishay Semiconductor（威世）
分类:
MOS管
封装:
SOT-23
描述:
VISHAY SI2328DS-T1-E3 晶体管, MOSFET, N沟道, 1.5 A, 100 V, 250 mohm, 10 V, 4 V
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
型号编码规则在P1
标记信息在P1
功能描述在P1
技术参数、封装参数在P1P2
导航目录
SI2328DS-T1-E3数据手册
Page:
of 5 Go
若手册格式错乱，请下载阅览PDF原文件
FEATURES
D 100% R
g
Tested
Si2328DS
Vishay Siliconix
Document Number: 71796
S-41259—Rev. C, 05-Jul-04
www.vishay.com
1
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
I
D
(A)
100 0.250 @ V
GS
= 10 V 1.5
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2328DS (D8)*
*Marking Code
Ordering Information: Si2328DS-T1
Si2328DS-T1—E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 sec Steady State Unit
Drain-Source Voltage V
DS
100
V
Gate-Source Voltage V
GS
"20
V
Continuous Drain Current (T
J
= 150
_
C)
a
T
A
= 25_C
I
D
1.5 1.15
Continuous Drain Current (T
J
= 150_C)
a
T
A
= 70_C
I
D
1.2 0.92
A
Pulsed Drain Current
b
I
DM
6
A
Avalanche Current
b
L = 0 1 mH
I
AS
6
Single Avalanche Energy
L = 0.1 mH
E
AS
1.8 mJ
Continuous Source Current (Diode Conduction)
a
I
S
0.6 A
Power Dissipation
a
T
A
= 25_C
P
D
1.25 0.73
W
Power Dissipation
a
T
A
= 70_C
P
D
0.80 0.47
W
Operating Junction and Storage Temperature Range T
J
, T
stg
−55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Mi J ti tAbit
a
t v 5 sec
R
80 100
Maximum Junction-to-Ambient
a
Steady State
R
thJA
130 170
_C/W
Maximum Junction-to-Foot Steady State R
thJF
45 55
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
