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SI2328DS-T1-E3数据手册
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Product Group: Vishay Siliconix/ July 1, 2016/APCN-SIL-0132016 Rev 0
Vishay Intertechnology, Inc.
Corporate Headquarters 63 Lincoln Highway, Malvern, PA 19355-2143 U.S.A. Phone (610) 644-1300 Fax (610) 296-0657 www.vishay.com
ONE OF THE WORLD’S LARGEST MANUFACTURERS OF DISCRETE SEMICONDUCTORS AND PASSIVE COMPONENT
Procedure #
Advisory Product Change Notification
Vishay Siliconix Leadframe Modification
DESCRIPTION OF CHANGE: As part of the Vishay Siliconix continuous improvement program, we would like to
announce the slight modification to the leadframes used on select SSOT23 products. Physically, a dambar is
being added between the leads on the frame to prevent movement of the bond wire landing pads during the mold
operation (see Fig 1).
Fig 1
The dambar is trimmed prior to the tin plating of the leads, so there will be no exposed copper due to this
change. While there will be a minor change to the look of the part (Fig 2), the change will not affect any
dimensions called out in the Package Outline Drawing.
CLASSIFICATION OF CHANGE: Change in direct material design
REASON FOR CHANGE: Package robustness to prevent the movement of the bond wire landing pads during
the mold operation
EXPECTED INFLUENCE ON QUALITY/RELIABILTY/PERFORMANCE: There will be no effect on quality,
reliability or electrical performance as a result of this leadframe modification. There will be no changes to data
sheets specifications or package dimensions.
PRODUCT CATEGORY: Low Voltage Power MOSFETs
AFFECTED PARTS: Refer to Table 1 on following page
VISHAY BRAND(s): Vishay Siliconix
ISSUED BY: Don Larson, Technical Marketing Manager. E-mail address: don.larson@Vishay.com
The Americas Europe Asia
Vishay Americas Vishay Electronic GmbH Vishay Intertechnology Asia Pte. Ltd
2201 Laurelwood Rd Geheimrat-Rosenthal-Strasse 100 25 Tampines Street 92
Santa Clara, Ca 95054 D-95100 #02-00 Keppel Building
T: 408-988-8000 Selb, Germany Singapore 52887
F: 408-567-8942 T: 49-9287-71 0 T: 65-6780-7838
F: 49-9287-70435 F: 65-6780-7791

SI2328DS-T1-E3 数据手册

VISHAY(威世)
8 页 / 0.19 MByte
VISHAY(威世)
10 页 / 0.19 MByte
VISHAY(威世)
2 页 / 0.09 MByte

SI2328DST1 数据手册

VISHAY(威世)
N沟道100 -V (D -S )的MOSFET N-Channel 100-V (D-S) MOSFET
VISHAY(威世)
N沟道100 -V (D -S )的MOSFET N-Channel 100-V (D-S) MOSFET
VISHAY(威世)
N 通道 MOSFET,100V 至 150V,Vishay Semiconductor### MOSFET 晶体管,Vishay Semiconductor
Vishay Semiconductor(威世)
VISHAY  SI2328DS-T1-E3  晶体管, MOSFET, N沟道, 1.5 A, 100 V, 250 mohm, 10 V, 4 V
Vishay Semiconductor(威世)
VISHAY  SI2328DS-T1-GE3  晶体管, MOSFET, N沟道, 1.5 A, 100 V, 195 mohm, 10 V, 4 V
Vishay Intertechnology
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