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SM6T6V8A-E3/5B 其他数据使用手册 - Vishay Semiconductor（威世）
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Vishay Semiconductor（威世）
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TVS二极管
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DO-214AA
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SM6T6V8A-E3/5B数据手册
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SM6T Series
Vishay General Semiconductor
Document Number: 88385
Revision: 04-Sep-07
www.vishay.com
81
Surface Mount TRANSZORB
®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• 600 W peak pulse power capability with a
10/1000 µs waveform
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Low inductance
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
• Solder dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g.
SM6T12CA).
Electrical characteristics apply in both directions.
PRIMARY CHARACTERISTICS
V
BR
6.8 V to 220 V
P
PPM
600 W
P
D
5.0 W
I
FSM
(uni-directional only) 100 A
T
J
max. 150 °C
DO-214AA (SMB)
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation on 10/1000 µs waveform
(1)(2)
(Fig. 1) P
PPM
600 W
Peak power pulse current with a 10/1000 µs waveform
(1)
(Fig. 3) I
PPM
See next table A
Power dissipation on infinite heatsink T
A
= 50 °C P
D
5.0 W
Peak forward surge current 10 ms single half sine-wave uni-directional only
(2)
I
FSM
100 A
Operating junction and storage temperature range T
J
, T
STG
- 65 to +150 °C
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