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SMBJ30A-TR 其他数据使用手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
TVS二极管
封装:
DO-214AA
描述:
STMICROELECTRONICS SMBJ30A-TR TVS二极管, TVS, Transil SMBJ系列, 单向, 30 V, 48.4 V, SMD, 2 引脚
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SMBJ30A-TR数据手册
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若手册格式错乱，请下载阅览PDF原文件
January 2018
DocID5616 Rev 11
1/11
This is information on a product in full production.
www.st.com
SMBJ
Transil™
Datasheet - production data
Features
Peak pulse power:
600 W (10/1000 μs)
4 kW (8/20 μs)
Stand-off voltage range: from 5 V to 188 V
Unidirectional and bidirectional types
Low leakage current:
0.2 μA at 25 °C
1 μA at 85 °C
Operating T
j
max: 150 °C
High power capability at T
j
max:
515 W (10/1000 μs)
JEDEC registered package outline
Complies with the following standards
IEC 61000-4-2 level 4:
15 kV (air discharge)
8 kV (contact discharge)
IEC 61000-4-5
MIL STD 883G, method 3015-7: class 3B:
25 kV HBM (human body model)
Resin meets UL 94, V0
MIL-STD-750, method 2026 soldererability
EIA STD RS-481 and IEC 60286-3 packing
IPC 7531 footprint
Description
The SMBJ Transil series has been designed to
protect sensitive equipment against electrostatic
discharges according to IEC 61000-4-2, and MIL
STD 883, method 3015, and electrical over stress
according to IEC 61000-4-4 and 5. These
devices are more generally used against surges
below 600 W (10/1000 μs).
Planar technology makes these devices suitable
for high-end equipment and SMPS where low
leakage current and high junction temperature
are required to provide reliability and stability
over time.
SMBJ are packaged in SMB (SMB footprint in
accordance with IPC 7531 standard).
Transil™ is a trademark of STMicroelectronics.
K
A
Unidirectional Bidirectional
SMB
(JEDEC DO-214AA)
K
A
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