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STD01W-6 产品封装文件 - TE Connectivity（泰科）
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STD01W-6数据手册
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December 2014
DocID025772 Rev 3
1/16
This is information on a product in full production.
www.st.com
STD46P4LLF6
P-channel 40 V, 0.0125 Ω typ., StripFET™ F6
Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order codes
V
DSS
R
DS(on)
max.
I
D
STD46P4LLF6
40 V
0.015 Ω
46 A
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits the lowest R
DS(on)
in all
packages.
Table 1: Device summary
Order codes
Marking
Package
Packaging
STD46P4LLF6
46P4LLF6
DPAK
Tape and
reel
For the P-channel Power MOSFETs the
actual polarity of the voltages and the
current must be reversed.
AM11258v1
D(2, TAB)
S(3)
G(1)
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