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STD01W-S 其他数据使用手册 - TE Connectivity（泰科）
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STD01W-S数据手册
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VS-1EFH01W-M3
www.vishay.com
Vishay Semiconductors
Revision: 24-Nov-14
1
Document Number: 94899
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 1 A FRED Pt
®
FEATURES
• Hyperfast recovery time, reduced Q
rr
, and soft
recovery
• 175 °C maximum operating junction temperature
• Low forward voltage drop
• Low leakage current
• Specific for output and snubber operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, as high frequency rectifiers and freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
Note
(1)
Device on PCB with 8 mm x 16 mm soldering lands
PRODUCT SUMMARY
Package DO-219AB (SMF)
I
F(AV)
1 A
V
R
100 V
V
F
at I
F
0.93 V
t
rr
25 ns
T
J
max. 175 °C
Diode variation Single die
Cathode Anode
SMF (DO-219AB)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
100 V
Average rectified forward current I
F(AV)
T
C
= 160 °C
(1)
1
A
Non-repetitive peak surge current I
FSM
T
J
= 25 °C 40
Operating junction and storage temperatures T
J
, T
Stg
-65 to 175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 100 - -
V
Forward voltage V
F
I
F
= 1 A - 0.87 0.93
I
F
= 1 A, T
J
= 125 °C - 0.74 0.8
Reverse leakage current I
R
V
R
= V
R
rated - - 2
μA
T
J
= 125 °C, V
R
= V
R
rated - 0.5 8
Junction capacitance C
T
V
R
= 100 V - 5 - pF
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