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November 2017
DocID18467 Rev 3
1/21
This is information on a product in full production.
www.st.com
STD10NM60ND,
STF10NM60ND, STP10NM60ND
N-channel 600 V, 0.57 Ω typ., 8 A, FDmesh™ II
Power MOSFETs in DPAK, TO-220FP and TO-220 packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
R
DS(on)
max.
I
D
P
TOT
STD10NM60ND
650 V
0.60 Ω
8 A
70 W
STF10NM60ND
25 W
STP10NM60ND
70 W
Fast-recovery body diode
Low gate charge and input capacitance
Low on-resistance R
DS(on)
100% avalanche tested
High dv/dt ruggedness
Applications
Switching applications
Description
These FDmesh™ II Power MOSFETs with fast-
recovery body diode are produced using
MDmesh™ II technology. Utilizing a new strip-
layout vertical structure, these devices feature
low on-resistance and superior switching
performance. They are ideal for bridge topologies
and ZVS phase-shift converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STD10NM60ND
10NM60ND
DPAK
Tape and reel
STF10NM60ND
TO-220FP
Tube
STP10NM60ND
TO-220
AM01475v1_noZen
D(2, TAB)
G(1)
S(3)

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