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STD100N10F7 产品封装文件 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252-3
描述:
MOSFET 晶体管，STMicroelectronics
Pictures:
3D模型
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STD100N10F7数据手册
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This is information on a product in full production.
April 2013 DocID023737 Rev 3 1/21
21
STD100N10F7,
STF100N10F7, STP100N10F7
N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET™ VII DeepGATE™
Power MOSFET in DPAK, TO-220FP and TO-220 packages
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
• Ultra low on-resistance
• 100% avalanche tested
Applications
• Switching applications
Description
These devices utilize the 7
th
generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest R
DS(on)
in all
packages.
TO-220
1
2
3
TA B
TA B
DPAK
1
2
3
TO-220FP
$0Y
'Ć7$%
*
6
Order codes V
DSS
R
DS(on)
I
D
P
TOT
STD100N10F7
100 V 0.008 Ω
80 A 120 W
STF100N10F7 45 A 30 W
STP100N10F7 80A 150 W
Table 1. Device summary
Order codes Marking Packages Packaging
STD100N10F7
100N10F7
DPAK Tape and reel
STF100N10F7 TO-220FP Tube
STP100N10F7 TO-220 Tube
www.st.com
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