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STD10NM60N 其他数据使用手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252-3
描述:
STMICROELECTRONICS STD10NM60N 功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.53 ohm, 10 V, 3 V
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STD10NM60N数据手册
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This is information on a product in full production.
December 2015 DocID028726 Rev 1 1/28
STD10NM60N, STF10NM60N,
STP10NM60N, STU10NM60N
N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET
in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
TO-220
TO-220FP
DPAK
7$%
IPAK
7$%
7$%
$0Y
'7$%
*
6
Order code
V
DS
@T
J
max.
R
DS(on)
max.
I
D
P
TOT
STD10NM60N
650 V 0.55 Ω 10 A
70 W
STF10NM60N 25 W
STP10NM60N
70 W
STU10NM60N
Table 1. Device summary
Order code Marking Package Packing
STD10NM60N 10NM60N DPAK Tape and reel
STF10NM60N 10NM60N TO-220FP Tube
STP10NM60N 10NM60N TO-220 Tube
STU10NM60N 10NM60N IPAK Tube
www.st.com
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