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September 2014 DocID025788 Rev 3 1/7
STEVAL-ILH007V1
150 W HID digital ballast based on the STLUX385A
Data brief
Features
Input voltage: 185 - 265 Vac
Rated lamp power: 150 W
Efficiency: > 92.5%
Power Factor: > 0.996
Input current THD: < 10%
Overtemperature protection for the electronics
Open load detection
Short-circuit protection
Input overvoltage protection
EMI: EN55015 pre-compliance
PLM remote control ready
Description
The STEVAL-ILH007V1 evaluation board is a 150
W high intensity discharge (HID) digital ballast
platform based on the STLUX385A digital
controller.
This solution is designed to drive sodium and
metal halide HID lamps. The board is composed
of two stages, the power factor corrector (PFC)
and the inverter.
The PFC is based on a boost topology to correct
the AC input current in phase with the AC voltage
mains. The inverter is based on a full bridge
topology to drive the lamps. The STLUX385A
digital controller drives both stages.
The STLUX385A device is part of the STLUX™
family of STMicroelectronics digital devices
tailored for lighting and power conversion
applications.
The heart of the STLUX is the SMED (state
machine, event driven) technology which allows
the device to operate several independently-
configurable PWM clocks with up to 1.3 ns
resolution. A SMED is a powerful autonomous
state machine which is programmed to react to
both external and internal events and may evolve
without any software intervention. The SMED
even reaction time can be as low as 10 ns, giving
the STLUX the ability of operating in time critical
applications. The SMEDs are configured and
programmed via the STLUX internal low-power
microcontroller (STM8 for the STLUX385A).
The STEVAL-ILH007V1 is designed to receive
commands by the PLM remote control unit, to
create a network for street lighting based on
power line communication.
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STD10NM60ND 数据手册

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STD10NM60 数据手册

ST Microelectronics(意法半导体)
STMICROELECTRONICS  STD10NM60N  功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.53 ohm, 10 V, 3 V
ST Microelectronics(意法半导体)
STMICROELECTRONICS  STD10NM60ND  功率场效应管, MOSFET, N沟道, 8 A, 600 V, 0.57 ohm, 10 V, 4 V
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