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STD17NF03L-1 其他数据使用手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-251-3
描述:
N沟道30V - 0.038ohm - 17A - DPAK / IPAK的STripFET TM II功率MOSFET N-channel 30V - 0.038ohm - 17A - DPAK/IPAK STripFET TM II Power MOSFET
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STD17NF03L-1数据手册
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1/11March 2002
.
STP55NF03L
STB55NF03L STB55NF03L-1
N-CHANNEL 30V - 0.01 Ω - 55A TO-220/D
2
PAK/I
2
PAK
STripFET™ II POWER MOSFET
■ TYPICAL R
DS
(on) = 0.01 Ω
■ OPTIMIZED FOR HIGH SWITCHING
OPERATIONS
■ LOW GATE CHARGE
■ LOGIC LEVEL GATE DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
■ LOW VOLTAGE DC-DC CONVERTERS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ HIGH EFFICIENCY SWITCHING CIRCUITS
TYPE
V
DSS
R
DS(on)
I
D
STP55NF03L
STB55NF03L
STB55NF03L-1
30 V
30 V
30 V
<0.013
Ω
<0.013
Ω
<0.013
Ω
55 A
55 A
55 A
1
2
3
TO-220
1
3
D
2
PAK
TO-263
I
2
PAK
TO-262
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
(
•)
Pulse width limited by safe operating area.
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30 V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
Ω
)
30 V
V
GS
Gate- source Voltage ± 16 V
I
D
Drain Current (continuous) at T
C
= 25°C
55 A
I
D
Drain Current (continuous) at T
C
= 100°C
39 A
I
DM
(
•)
Drain Current (pulsed) 220 A
P
tot
Total Dissipation at T
C
= 25°C
80 W
Derating Factor 0.53 W/°C
T
stg
Storage Temperature -60 to 175 °C
T
j
Max. Operating Junction Temperature 175 °C
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