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STD20 产品封装文件 - Visual Communications Company
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STD20数据手册
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Electrical characteristics
STD20P3H6AG
4/15
DocID028377 Rev 2
2 Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 4: Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
V
GS
= 0 V, I
D
= -250 µA
-30
V
I
DSS
Zero gate voltage drain
current
V
GS
= 0 V, V
DS
= -30 V
-1
µA
V
GS
= 0 V, V
DS
= -30 V,
T
case
= 125 °C
-10
I
GSS
Gate-body leakage current
V
DS
= 0 V, V
GS
= -20 V
-100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= -250 µA
-2
-4
V
R
DS(on)
Static drain-source on-
resistance
V
GS
= -10 V, I
D
= -10 A
33
50
mΩ
Table 5: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
Input capacitance
V
DS
= -25 V, f = 1 MHz, V
GS
= 0 V
-
635
-
pF
C
oss
Output
capacitance
-
155
-
C
rss
Reverse transfer
capacitance
-
100
-
Q
g
Total gate charge
V
DD
= -15 V, I
D
= -20 A, V
GS
= -10 V
(see Figure 14: "Gate charge test
circuit")
-
12.8
-
nC
Q
gs
Gate-source
charge
-
4.4
-
Q
gd
Gate-drain charge
-
3.4
-
Table 6: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on
delay time
V
DD
= -15 V, I
D
= -10 A R
G
= 4.7 Ω, V
GS
= -
10 V (see Figure 13: "Switching times test
circuit for resistive load" )
-
9.4
-
ns
t
r
Rise time
-
28.2
-
t
d(off)
Turn-off
delay time
-
15.8
-
t
f
Fall time
-
6.25
-
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