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STD25N10F7 产品封装文件 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252-3
描述:
STD25N10F7 编带
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STD25N10F7数据手册
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This is information on a product in full production.
September 2013 DocID025265 Rev 1 1/21
STD25N10F7,
STF25N10F7, STP25N10F7
N-channel 100 V, 0.027 Ω typ., 25 A, STripFET™ VII DeepGATE™
Power MOSFET in DPAK, TO-220FP and TO-220 packages
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
• Ultra low on-resistance
• 100% avalanche tested
Applications
• Switching applications
Description
These devices utilize the 7
th
generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest R
DS(on)
in all
packages.
1
2
3
TA B
TA B
1
2
3
DPAK
TO-220FP TO-220
$0Y
'Ć7$%
*
6
Order codes V
DSS
R
DS(on)
max.
(1)
1. @ V
GS
= 10 V
I
D
P
TOT
STD25N10F7 100 V 0.035 Ω 25 A 40 W
STF25N10F7 100 V 0.035 Ω 19 A 25 W
STP25N10F7 100 V 0.035 Ω 25 A 50 W
Table 1. Device summary
Order codes Marking Package Packaging
STD25N10F7 25N10F7 DPAK Tape and reel
STF25N10F7 25N10F7 TO-220FP Tube
STP25N10F7 25N10F7 TO-220 Tube
www.st.com
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