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STD25NF10 其他数据使用手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252
描述:
N沟道100V - 0.033ohm - 25A DPAK低栅电荷STripFET⑩功率MOSFET N-CHANNEL 100V - 0.033ohm - 25A DPAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
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STD25NF10数据手册
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This is information on a product in full production.
May 2015 DocID024372 Rev 3 1/16
STD25NF20
Automotive-grade N-channel 200 V, 0.10 Ω typ., 18 A
STripFET™ Power MOSFET in a DPAK package
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
• Designed for automotive applications and
AEC-Q101 qualified
• Extremely low gate charge
• Exceptional dv/dt capability
• Low gate input resistance
• 100% avalanche tested
Applications
• Switching applications
Description
This N-channel enhancement mode Power
MOSFET benefits from the latest refinement of
STMicroelectronics' unique “single feature size“
strip-based process, which decreases the critical
alignment steps to offer exceptional
manufacturing reproducibility. The result is a
transistor with extremely high packing density for
low on-resistance, rugged avalanche
characteristics and low gate charge.
DPAK
1
3
TAB
$0Y
'7$%
*
6
Order code V
DS
R
DS(on)
max
I
D
P
TOT
STD25NF20 200 V 0.125 Ω 18 A 110 W
Table 1. Device summary
Order code Marking Package Packing
STD25NF20 25NF20 DPAK Tape and reel
www.st.com
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