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STD25NF10LT4
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STD25NF10LT4数据手册
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July 2006 Rev 2 1/13
13
STD25NF10L
N-channel 100V - 0.030 - 25A - DPAK
Low gate charge STripFET™ II Power MOSFET
General features
Exceptional dv/dt capability
100% avalanche tested
Low threshold device
Logic level device
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.
Applications
Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STD25NF10L 100V < 0.035 25A
DPAK
1
3
www.st.com
Order codes
Part number Marking Package Packaging
STD25NF10LT4 D25NF10L DPAK Tape & reel

STD25NF10LT4 数据手册

ST Microelectronics(意法半导体)
13 页 / 0.41 MByte
ST Microelectronics(意法半导体)
14 页 / 0.4 MByte
ST Microelectronics(意法半导体)
1 页 / 0.13 MByte

STD25NF10 数据手册

ST Microelectronics(意法半导体)
N沟道100V - 0.033ohm - 25A DPAK低栅电荷STripFET⑩功率MOSFET N-CHANNEL 100V - 0.033ohm - 25A DPAK LOW GATE CHARGE STripFET⑩ POWER MOSFET
ST Microelectronics(意法半导体)
N 通道 STripFET™ II,STMicroelectronicsSTripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。### MOSFET 晶体管,STMicroelectronics
ST Microelectronics(意法半导体)
STMICROELECTRONICS  STD25NF10T4  晶体管, MOSFET, N沟道, 12.5 A, 100 V, 33 mohm, 10 V, 3 V
ST Microelectronics(意法半导体)
STMICROELECTRONICS  STD25NF10LA  晶体管, MOSFET, N沟道, 25 A, 100 V, 30 mohm, 10 V, 2.5 V
ST Microelectronics(意法半导体)
N沟道100V - 0.030欧姆 - 25A DPAK低栅电荷STripFET⑩ II功率MOSFET N-CHANNEL 100V - 0.030 ohm - 25A DPAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET
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