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STD30PF03L 其他数据使用手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-252
描述:
P沟道30V - 0.025ohm - 24A DPAK / IPAK STripFET⑩ II功率MOSFET P-CHANNEL 30V - 0.025ohm - 24A DPAK/IPAK STripFET⑩ II POWER MOSFET
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STD30PF03L数据手册
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This is information on a product in full production.
January 2016 DocID025607 Rev 3 1/16
STD30N10F7
N-channel 100 V, 0.02 Ω typ., 32 A STripFET™ F7
Power MOSFET in a DPAK package
Datasheet − production data
Figure 1. Internal schematic diagram
Features
• Among the lowest R
DS(on)
on the market
• Excellent figure of merit (FoM)
• Low C
rss
/C
iss
ratio for EMI immunity
• High avalanche ruggedness
Applications
• Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
$0Y
'7$%
*
6
DPAK
1
3
TA B
Order code V
DS
R
DS(on)
max I
D
P
TOT
STD30N10F7 100 V 0.024 Ω 32 A 50 W
Table 1. Device summary
Order code Marking Package Packing
STD30N10F7 30N10F7 DPAK Tape and reel
www.st.com
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