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STD35NF06L 产品封装文件 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
封装:
TO-252
描述:
N沟道60V - 0.014ohm - 35A DPAK STripFET⑩II MOSFET N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFET⑩II MOSFET
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STD35NF06L数据手册
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This is information on a product in full production.
April 2012 Doc ID 7662 Rev 5 1/14
14
STD35NF06L
N-channel 60 V, 0.014 Ω, 35 A STripFET™ II Power MOSFET
in a DPAK package
Datasheet — production data
Features
■ Low threshold drive
■ Gate charge minimized
Applications
■ Switching application
Description
This Power MOSFET has been developed using
STMicroelectronics’ unique STripFET process,
which is specifically designed to minimize input
capacitance and gate charge. This renders the
device suitable for use as primary switch in
advanced high-efficiency isolated DC-DC
converters for telecom and computer applications,
and applications with low gate charge driving
requirements.
Figure 1. Internal schematic diagram
Order code V
DSS
R
DS(on)
I
D
STD35NF06LT4 60V <0.017Ω 35A
DPAK
1
3
TAB
!-V
$4!"OR
'
3
Table 1. Device summary
Order code Marking Package Packaging
STD35NF06LT4 D35NF06L DPAK Tape and reel
www.st.com
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