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STD5N52K3数据手册
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December 2010 Doc ID 16952 Rev 2 1/23
23
STB5N52K3, STD5N52K3, STF5N52K3
STP5N52K3, STU5N52K3
N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3™ Power MOSFET
D²PAK, DPAK, TO-220FP, TO-220, IPAK
Features
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitance
Improved diode reverse recovery
characteristics
Zener-protected
Application
Switching applications
Description
These devices are made using the
SuperMESH3™ Power MOSFET technology that
is obtained via improvements applied to
STMicroelectronics’ SuperMESH™ technology
combined with a new optimized vertical structure.
The resulting product has an extremely low on
resistance, superior dynamic performance and
high avalanche capability, making it especially
suitable for the most demanding applications.
Figure 1. Internal schematic diagram
Order codes V
DSS
R
DS(on)
max I
D
P
w
STB5N52K3
STD5N52K3
STF5N52K3
STP5N52K3
STU5N52K3
525 V < 1.5 Ω 4.4 A
70 W
70 W
25 W
70 W
70 W
1
2
3
TO-220
IPAK
TO-220FP
1
2
3
3
2
1
DPAK
1
3
1
3
D²PAK
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes Marking Package Packaging
STB5N52K3
5N52K3
D²PAK
Tape and reel
STD5N52K3 DPAK
STF5N52K3 TO-220FP
Tu beSTP5N52K3 TO-220
STU5N52K3 IPAK
www.st.com

STD5N52K3 数据手册

ST Microelectronics(意法半导体)
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STD5N52 数据手册

ST Microelectronics(意法半导体)
N 通道 MDmesh™ K3 系列,SuperMESH3™, STMicroelectronics### MOSFET 晶体管,STMicroelectronics
ST Microelectronics(意法半导体)
STMICROELECTRONICS  STD5N52U  晶体管, MOSFET, N沟道, 4.4 A, 525 V, 1.28 ohm, 10 V, 3.75 V
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