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STD6 产品封装文件 - Eaton Bussmann（伊顿巴斯曼）
制造商:
Eaton Bussmann（伊顿巴斯曼）
分类:
热熔断路器/开关/保险丝
封装:
Cylindrical, Blade Terminal (Bolt)
Pictures:
3D模型
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STD6数据手册
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Electrical characteristics STD60N3LH5
4/19 DocID14079 Rev 5
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
Voltage
I
D
= 250 µA, V
GS
= 0 30 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 30 V
V
DS
= 30 V, T
C
= 125 °C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ± 20 V
±
100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 1 1.8 3 V
R
DS(on)
Static drain-source
on-resistance
V
GS
= 10 V, I
D
= 24 A 0.0072 0.008 Ω
V
GS
= 5 V, I
D
= 24 A 0.0088 0.011 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
=25 V, f=1 MHz,
V
GS
=0
- 1350 1620 pF
C
oss
Output capacitance - 265 318 pF
C
rss
Reverse transfer
capacitance
-3238pF
Q
g
Total gate charge
V
DD
=15 V, I
D
= 48 A
V
GS
=5 V
(Figure 14)
- 8.8 12.3 nC
Q
gs
Gate-source charge - 4.7 6.6 nC
Q
gd
Gate-drain charge - 2.2 3.1 nC
Q
gs1
Pre V
th
gate-to-source
charge
V
DD
=15 V, I
D
= 48 A
V
GS
=5 V
(Figure 19)
-2.23.1nC
Q
gs2
Post V
th
gate-to-source
charge
-2.53.5nC
R
G
Gate input resistance
f = 1 MHz, gate DC
Bias = 0,
test signal level = 20 mV,
I
D
= 0
-1.11.3Ω
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