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STD6 产品封装文件 - Kodenshi
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This is information on a product in full production. This is information on a product still in production but not recommended
for new designs.
August 2013 DocID14079 Rev 5 1/19
STD60N3LH5
N-channel 30 V, 0.0072 Ω typ., 48 A STripFET™ V Power MOSFET
in a DPAK package
Datasheet
-
not recommended for new design
Figure 1. Internal schematic diagram
Features
• R
DS(on)
* Q
g
industry benchmark
• Extremely low on-resistance R
DS(on)
• Very low switching gate charge
• High avalanche ruggedness
• Low gate drive power losses
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using STMicroelectronics’
STripFET™V technology. The device has been
optimized to achieve very low on-state resistance,
contributing to a FOM that is among the best in its
class.
1
3
TAB
DPAK
$0Y
'7$%
*
6
Order code V
DS @ Tjmax
R
DS(on)
max I
D
STD60N3LH5 35 V 0.008 Ω 48 A
Table 1. Device summary
Order code Marking Packages Packaging
STD60N3LH5 60N3LH5 DPAK Tape and reel
www.st.com
Obsolete Product(s) - Obsolete Product(s)
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