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STF10N80K5 产品封装文件 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-220-3
描述:
STF10N80K5 管装
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3D模型
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STF10N80K5数据手册
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This is information on a product in full production.
November 2014 DocID026564 Rev 4 1/14
STF10N80K5
N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5
Power MOSFET in a TO-220FP package
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
• Industry’s best R
DS(on)
• Industry’s best figure of merit (FoM)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This very high voltage N-channel Power MOSFET
is designed using MDmesh™ K5 technology
based on an innovative proprietary vertical
structure. The result is a dramatic reduction in on-
resistance and ultra-low gate charge for
applications requiring superior power density and
high efficiency.
1
2
3
TO-220FP
D(2)
G(1)
S(3)
AM01476v1
Order code V
DS
R
DS(on)
max I
D
P
TOT
STF10N80K5 800 V 0.600 Ω 9 A 30 W
Table 1. Device summary
Order code Marking Package Packaging
STF10N80K5 10N80K5 TO-220FP Tube
www.st.com
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