Datasheet 搜索 > 微控制器 > ST Microelectronics（意法半导体） > STM32F103C6T6 数据手册 > STM32F103C6T6 其他数据使用手册 6/10 页
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STM32F103C6T6 其他数据使用手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
微控制器
封装:
LQFP-48
描述:
STMICROELECTRONICS STM32F103C6T6 微控制器, 32位, ARM 皮质-M3, 72 MHz, 32 KB, 10 KB, 48 引脚, LQFP
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型号编号列表在P2P7
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STM32F103C6T6数据手册
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Maximum current consumptions in Stop and Standby modes (32 KB Flash capacity)
T
A
= 85 °C[2] T
A
= 105 °C[1]
T
A
=85°C[2] T
A
=105°C[1]
200 370
160 200
180 340
145 185
Supply
current in
Standby
mode[3]
3.2 4.5 3.2 4.5
I
DD_VBAT
Backup
domain
supply
current
1.9 2.2[2] 1.9 2.2[2]
[1]Data based on characterization results, tested in production at V
DDmax
, f
HCLK
max. and T
A
max.
[2]Based on characterization, not tested in production.
I
DD
Low-speed internal RC
oscillator and independent
watchdog OFF, low-speed
oscillator and RTC OFF
Low-speed oscillator and
RTC ON
µA
[3]To have the Standby consumption with RTC ON, add I
DD_VBAT
(Low-speed oscillator and RTC ON) to I
DD
Standby
(when V
DD
is present the Backup Domain is powered by V
DD
supply).
Max
Regulator in Low Power
mode, low-speed and high-
speed internal RC
oscillators and high-speed
oscillator OFF (no
independent watchdog)
Symbol Parameter Conditions Unit
Before After
Supply
current in
Stop mode
Regulator in Run mode, low
-
speed and high-speed
internal RC oscillators and
high-speed oscillator OFF
(no independent watchdog)
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