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STPSC8H065B-TR 产品修订记录 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
肖特基二极管
封装:
TO-252-3
描述:
STMICROELECTRONICS STPSC8H065B-TR 二极管, 碳化硅肖特基, SIC, 650V系列, 单, 650 V, 8 A, 23.5 nC, TO-252
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STPSC8H065B-TR数据手册
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PRODUCT / PROCESS CHANGE NOTIFICATION
1. PCN basic data
1.1 Company STMicroelectronics International N.V
1.2 PCN No. IPD/15/9230
1.3 Title of PCN Die optimization for STPSCxxH065xx / STPSCxxH065xxY and STPSCxxTH13TI
1.4 Product Category STPSCxxH065xx / STPSCxxH065xxY and STPSCxxTH13TI
1.5 Issue date 2015-05-11
2. PCN Team
2.1 Contact supplier
2.1.1 Name MARSHALL DAVE
2.1.2 Phone
2.1.3 Email dave.marshall@st.com
2.2 Change responsibility
2.2.1 Product Manager Franck DUCLOS
2.1.2 Marketing Manager Eric PARIS
2.1.3 Quality Manager Jean-Paul REBRASSE
3. Change
3.1 Category 3.2 Type of change 3.3 Manufacturing Location
Wafer Fab (Process) (Not Defined) Catania wafer fab
4. Description of change
Old New
4.1 Description n/a STMicroelectronics is now going to implement
the new die optimization layout for its H series
rectifier products in SiC 650V technology.
4.2 Anticipated Impact on form,fit,
function, quality, reliability or
processability?
no
5. Reason / motivation for change
5.1 Motivation This change enhances ST’s competitiveness in SiC market by improving our positioning
price/performances.
5.2 Customer Benefit SERVICE IMPROVEMENT
6. Marking of parts / traceability of change
6.1 Description internal codifications and QA number
7. Timing / schedule
7.1 Date of qualification results 2015-05-04
7.2 Intended start of delivery 2015-07-01
7.3 Qualification sample available? Upon Request
8. Qualification / Validation
8.1 Description
8.2 Qualification report and
qualification results
In progress Issue
Date
9. Attachments (additional documentations)
9230PpPrdtLst.pdf
PCN_SiC Rectifiers_die optimization.pdf
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