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STW20N90K5 产品封装文件 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-247-3
描述:
晶体管, MOSFET, N沟道, 20 A, 900 V, 0.21 ohm, 10 V, 4 V
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STW20N90K5数据手册
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December 2016
DocID029149 Rev 2
1/12
This is information on a product in full production.
www.st.com
STW20N90K5
N-channel 900 V, 0.21 Ω typ., 20 A MDmesh™ K5
Power MOSFET in a TO-247 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
V
DS
R
DS(on)
max.
I
D
STW20N90K5
900 V
0.25 Ω
20 A
Industry’s lowest R
DS(on)
x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Table 1: Device summary
Order code
Marking
Package
Packing
STW20N90K5
20N90K5
TO-247
Tube
TO-247
1
2
3
AM15572v1_no_tab
D(2)
G(1)
S(3)
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