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STW26NM60ND 产品封装文件 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
MOS管
封装:
TO-247-3
描述:
N 通道 FDmesh™ 功率 MOSFET，STMicroelectronics### MOSFET 晶体管，STMicroelectronics
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STW26NM60ND数据手册
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若手册格式错乱，请下载阅览PDF原文件
This is information on a product in full production.
November 2013 DocID025283 Rev 1 1/23
STB26NM60ND, STF26NM60ND,
STP26NM60ND, STW26NM60ND
N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh™ II Power MOSFETs
in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche
capabilities
Applications
• Switching applications
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
TO-220
D PAK
2
TO-220FP
TO-247
1
2
3
1
2
3
1
3
TAB
1
2
3
TAB
!-V
'7$%
*
6
Order codes V
DS
@
T
jmax
R
DS(on)
max I
D
STB26NM60ND
650 V 0.175 21 A
STF26NM60ND
STP26NM60ND
STW26NM60ND
Table 1. Device summary
Order codes Marking Packages Packaging
STB26NM60ND
26NM60ND
D²PAK Tape and reel
STF26NM60ND TO-220FP
TubeSTP26NM60ND TO-220
STW26NM60ND TO-247
www.st.com
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