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STW40N95K5
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STW40N95K5数据手册
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November 2014
DocID026447 Rev 2
1/13
This is information on a product in full production.
www.st.com
STW40N95K5
N-channel 950 V, 0.110 Ω typ., 38 A MDmesh™ K5
Power MOSFET in a TO-247 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
R
DS(on)
max
I
D
P
TOT
STW40N95K5
950 V
0.130 Ω
38 A
450 W
Industry’s lowest R
DS(on)
x area
Industry’s best figure of merit (FoM)
Ultra low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Table 1: Device summary
Order code
Marking
Package
Packaging
STW40N95K5
40N95K5
TO-247
Tube
1
2
3
TO-247

STW40N95K5 数据手册

ST Microelectronics(意法半导体)
13 页 / 0.74 MByte
ST Microelectronics(意法半导体)
30 页 / 0.31 MByte

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