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SUD19P06-60-E3 其他数据使用手册 - VISHAY（威世）
制造商:
VISHAY（威世）
分类:
MOS管
封装:
TO-252-3
描述:
P通道60 -V （D -S ）的MOSFET P-Channel 60-V (D-S) MOSFET
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SUD19P06-60-E3数据手册
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Vishay Siliconix
SUD19P06-60
Document Number: 69253
S11-2132 Rev. B, 31-Oct-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-Channel 60 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• High Side Switch for Full Bridge Converter
• DC/DC Converter for LCD Display
Notes:
a. Duty cycle 1 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Based up on T
C
= 25 °C.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()
I
D
(A)
d
Q
g
(Typ)
- 60
0.060 at V
GS
= - 10 V
- 19
26
0.077 at V
GS
= - 4.5 V
- 16.8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise note)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
- 60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
- 18.3
A
T
C
= 125 °C
- 8.19
Pulsed Drain Current
I
DM
- 30
Avalanche Current, Single Pulse
L = 0.1 mH
I
AS
- 22
Repetitive Avalanche Energy, Single Pulse
a
E
AS
24.2 mJ
Power Dissipation
T
C
= 25 °C
P
D
38.5
c
W
T
A
= 25 °C
2.3
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
TO-252
SGD
Top View
Drain Connected to Tab
S
G
D
P-Channel MOSFET
Ordering Information: SUD19P06-60-E3 (Lead (Pb)-free)
SUD19P06-60-GE3 (Lead (Pb)-free and Halogen free)
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b
t 10 s
R
thJA
17 21
°C/W
Steady State 45 55
Maximum Junction-to-Case
R
thJC
2.7 3.25
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