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SUP85N10-10 其他数据使用手册 - VISHAY（威世）
制造商:
VISHAY（威世）
分类:
MOS管
封装:
TO-220
描述:
N沟道100 -V （D -S ） 175 MOSFET N-Channel 100-V (D-S) 175 MOSFET
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SUP85N10-10数据手册
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Vishay Siliconix
SUP/SUB85N10-10
Document Number: 71141
S-61008–Rev. D, 12-Jun-06
www.vishay.com
1
N-Channel 100-V (D-S) 175 °C MOSFET
FEATURES
•TrenchFET
®
Power MOSFET
• 175 °C Maximum Junction Temperature
PRODUCT SUMMARY
V
(BR)DSS
(V) r
DS(on)
(Ω)
I
D
(A)
100
0.0105 at V
GS
= 10 V
85
a
0.012 at V
GS
= 4.5 V
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve fo voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ORDERING INFORMATION
Package Tin/Lead Plated Lead (Pb)-free
TO-220AB SUP85N10-10
SUP85N10-10-E3
TO-263
SUB85N10-10
SUB85N10-10-E3
TO-220AB
Top View
GDS
DRAIN connected to TAB
TO-263
SDG
Top View
SUP85N10-10
SUB85N10-10
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
100
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
85
a
A
T
C
= 125 °C 60
a
Pulsed Drain Current
I
DM
240
Avalanche Current
L = 0.1 mH
I
AS
75
Single Pulse Avalanche Energy
b
E
AS
280
mJ
Maximum Power Dissipation
b
T
C
= 25 °C (TO-220AB and TO-263)
P
D
250
c
W
T
A
= 25 °C (TO-263)
d
3.75
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient
PCB Mount (TO-263)
d
R
thJA
40
°C/W
Free Air (TO-220AB)
62.5
Junction-to-Case
R
thJC
0.6
Available
RoHS*
COMPLIANT
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